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| AOD403 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD403 is Pb-free (meets ROHS & Sony 259 specifications). AOD403L is a Green Product ordering option. AOD403 and AOD403L are electrically identical. TO-252 D-PAK D Features VDS (V) = -30V ID = -85A (VGS = -20V) RDS(ON) < 6m (VGS = -20V) RDS(ON) < 7.6m (VGS = -10V) Top View Drain Connected to Tab G G D S S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation B Power Dissipation A C Maximum -30 25 -85 -65 -200 -30 120 100 50 2.5 1.6 -55 to 175 Units V V A A mJ W W C TA=25C G TA=100C B ID IDM IAR EAR PD PDSM TJ, TSTG TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Case Symbol t 10s Steady-State Steady-State RJA RJL Typ 13 39 0.56 Max 20 50 1.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD403 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-20V, ID=-20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-10V, ID=-20A Forward Transconductance VDS=-5V, ID=-20A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1.5 -60 5.1 7.1 6.3 44 -0.72 -1 -104 4360 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1050 762 2.5 93.2 VGS=-10V, VDS=-15V, ID=-20A 18 29.2 18 VGS=-10V, VDS=-15V, RL=0.75, RGEN=3 IF=-20A, dI/dt=100A/s 2 Min -30 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current -0.01 -1 -5 100 A nA V A m m S V A pF pF pF -2.6 -3.5 6 8.5 7.6 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance 5300 3 120 nC nC nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time 25 45 75 50 48 37 ns ns ns ns ns nC 30 51 35 39.5 30.8 Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on steady-state R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB or heatsink allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. Rev 4: Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 -10V 80 60 40 20 0 0 1 2 3 -4V VGS=-2V 4 5 -6V -5V -ID(A) -4.5V 60 50 40 30 20 10 0 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 25C 125C VDS=-5V -ID (A) -VDS (Volts) Fig 1: On-Region Characteristics 10 8 RDS(ON) (m) 6 4 2 0 0 10 20 30 40 50 60 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=-20V VGS=-10V Normalized On-Resistance 1.6 ID=-20A 1.4 VGS=-20V VGS=-10V 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 24 20 RDS(ON) (m) 16 ID=-20A -12.8 -15 1.0E+02 1.0E+01 1.0E+00 125C -IS (A) 1.0E-01 1.0E-02 1.0E-03 12 8 1.0E-04 25C 125C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 4 1.0E-05 COMPONENTS IN25C SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING LIFE 8 4 12 16 20 1.0E-06 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, -VGS (Volts) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Figure 5: On-Resistance vs. Gate-Source Voltage -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOD403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 -VGS (Volts) 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-20A Capacitance (pF) 7000 6000 5000 4000 3000 2000 1000 0 0 Crss 5 10 15 20 25 30 Coss Ciss -VDS (Volts) Figure 8: Capacitance Characteristics 1000 RDS(ON) limited 100 1ms 100s 10ms 10s Power (W) 80 60 40 20 0 0.01 100 100 -ID (Amps) TJ(Max)=150C TA=25C 10 0.1s 1s 1 TJ(Max)=150C TA=25C 10s DC 1 -VDS (Volts) 10 0.1 0.1 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJA Normalized Transient Thermal Resistance 1 D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse -12.8 -15 0.1 PD 0.01 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL Ton COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING T OUT OF SUCH APPLICATIONSSingle Pulse ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, OR USES OF 0.001 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. |
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